HIGH-SPEED OUTPUT STAGES OF OPERATIONAL AMPLIFIERS WITH DIFFERENCING CIRCUIT CORRECTION OF TRANSITION PROCESS

Abstract

The development and design of gallium arsenide (GaAs) analogue functional units in modern microelectronics (operational amplifiers, output stages, etc.) is at the initial stage of development. This is because GaAs wide-gap semiconductors are currently positioned primarily for high-current and ultrahigh- frequency electronics (e.g., power supplies, power amplifiers, etc.). To create micro-power analogue component base operating under severe operating conditions, for example, under high temperatures (+300...+350°C) and radiation, it is necessary to develop special GaAs circuit solutions that take into account the parameters and limitations of the corresponding technological processes. A family of output stages protected by 5 patents of the Russian Federation for various modifications of GaAs micro-power operational amplifiers is proposed, which can be realised on the combined GaAs technological process allowing to create n-channel field-effect transistors with control p-n junction and GaAs bipolar p-n-p transistors. The considered OS circuits differ from each other by the values of input and output resistances, static current consumption, circuitry of static mode establishment circuits, frequency range, maximum amplitudes of positive and negative output voltage, etc. The results of comparative computer modeling of the static mode, amplitude and amplitude-frequency characteristics of the OS in LTspice simulation software are given. The proposed circuit solutions are recommended for application in GaAs micro-power operational amplifiers of new generation, as well as for use in various GaAs analog microelectronic devices, including those operating under severe operating conditions: exposure to penetrating radiation and low temperatures. At small-scale production of the proposed output stages it is recommended to perform them on GaAs technological process mastered by Minsk Scientific Research Institute of Radio Materials (JSC ‘MNIIRM’, Minsk, Republic of Belarus), which allows the operation of the proposed circuits at high temperatures (up to +300...+350 oC), as well as under the influence of penetrating radiation with absorbed dose of gamma-quanta (up to 1 Mrad) and neutron flux (up to 1013 n/cm2).