INVESTIGATION OF MEMRISTIVE NANOSCALE STRUCTURES WITH PROFILED INTERFACEFOR NEUROMORPHIC ELECTRONICS
Abstract
The article presents the results of the development of nanoscale memristive structures, the application of which is promising for the hardware implementation of artificial intelligence systems. A design of a memristive cell based on a titanium oxide film with a thickness ranging from 3 to 50 nm is proposed. The upper electrode of the cell features a profiled structure in the form of two high-aspect-ratio nanoscale tip structures (HANTS), where one tip has a radius of 10 nm, and the radius of the second tip varies in the range of 10 to 50 nm. Platinum was chosen as the material for the upper electrode due to its unique physicochemical properties, including high chemical inertness across a wide range of temperatures and aggressive environments, low electrical resistivity, and resistance to oxidation. These characteristics make platinum an optimal material for use in electronic devices and sensor systems where long-term stability and minimal energy losses during signal transmission are required. The results of modeling the electric field strength distribution in the interelectrode gap of the memristive cell are presented. The modeling was performed using COMSOL Multiphysics software, which solves systems of nonlinear partial differential equations using the finite element method, with a potential difference of 5 V between the electrodes. Based on the modeling results, the dependencies of the electric field strength on the geometric parameters of the memristive cell were obtained and analyzed. Local enhancement of the electric field strength was identified along the perimeter of the oxide-HANTS interface. The increase in the non-uniformity of the electric field strength grows with the thickness of the oxide film and can reach 13.4%. The obtained results can be used in the development of neuromorphic electronic components for robotic systems and artificial intelligence systems based on memristors
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